| PART |
Description |
Maker |
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| IDT70V3389S6PRFI IDT70V3389S IDT70V3389S4BC IDT70V |
From old datasheet system
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA256
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PQFP128
HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| A63P7336E-4.2F A63P7336 A63P7336E A63P7336E-2.6 A6 |
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米36位同步高的Burst计数器和流水线数据输出高速SRAM
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米6位同步高的Burst计数器和流水线数据输出高速SRAM
DIODE, ZENER, 12V, 500MW, DO35
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999)
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IS61LP6B436A-166TQLBI IS61LP6436A IS61LP6436A-133T |
64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| IDT709189L 709189_DS_91155 IDT709189L12PF IDT70918 |
64K x 9 Sync, Dual-Port RAM, PipleLined/FLow-Through
HIGH-SPEED 64K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
From old datasheet system
|
IDT[Integrated Device Technology]
|
| IDT70V9289L |
HIGH-SPEED 3.3V 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4
18Mb Pipelined DDR垄芒II SRAM Burst of 4
|
Integrated Device Technology
|
| IDT70V9189L 70V9189_DS_29539 |
HIGH-SPEED 3.3V 64K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
From old datasheet system
|
IDT
|
| IDT71P73204 IDT71P73204167BQ IDT71P73804 IDT71P738 |
18Mb Pipelined DDR垄芒II SRAM Burst of 4
18Mb Pipelined DDR?⑸I SRAM Burst of 4
18Mb Pipelined DDR?II SRAM Burst of 4
|
Integrated Device Technology
Integrated Device Techn...
|
